Abstract
A “T” shaped micro-gap was fabricated by mechanical polishing between two Cu film electrodes on the surface of single-sided bonded copper. A nano-gap was then fabricated in the prepared micro-gap by resistance feedback controlled electroplating. Finally Ni80Fe20 ferromagnetic nanocontacts of several sizes were fabricated in the prepared nano-gap by resistance feedback controlled electroplating. The magnetoresistance of each Ni80Fe20 ferromagnetic nanocontact was not related to its size. Fabrication of the Ni80Fe20 ferromagnetic nanocontacts in the nano-gap can reduce the contribution of magnetostriction to the magnetoresistance. The magnetoresistance values of the Ni80Fe20 ferromagnetic nanocontacts were as high as those of the Ni ferromagnetic nanocontacts. This implies that the contribution of magnetostriction to the ballistic magnetoresistance of the ferromagnetic nanocontacts can be neglected. The ferromagnetic nanocontacts fabricated in this study, and in other cases, have two anisotropic interfaces on the sides of the nanocontacts. However, the magnetic field can alter the contribution of the interaction between the two anisotropic interfaces to the ballistic magnetoresistance of the ferromagnetic nanocontacts, and this effect can not be ruled out yet.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
Grünberg P. From spinwaves to giant magnetoresistance (gmr) and beyond. Nobel Lecture, December 8, 2007
Schnable G L, Keen R S. Failure mechanisms in large-scale integrated circuits. IEEE Trans Electr Devices, 1969, 4: 322–332
Landauer R. Electrical resistance of disordered one-dimensional lattices. Philos Mag, 1970, 21: 863–867
Wolf S A, Awschalom D D, Buhrman R A, et al. Spintronics: A spin-based electronics vision for the future. Science, 2001, 294: 1488–1495
Aviram A, Ratner M A. Molecular rectifiers. Chem Phys Lett, 1974, 29: 277–283
Garcia N, Munoz M, Zhao Y W. Magnetoresistance in Ni nanocontacts in excess of 200% at room temperature and 100 Oe field. Phys Rev Lett, 1999, 82: 2923–2926
Chopra H D, Hua S Z. Ballistic magnetoresistance over 3000% in Ni nanocontacts at room temperature. Phys Rev B, 2002, 66: 020403
Chopra H D, Matthew R S, Jason N A, et al. The quantum spin-valve in cobalt atomic point contacts. Nat Mater, 2005, 4: 832–837
Hua S Z, Chopra H D. 100000% ballistic magnetoresistance in stable Ni nanocontacts at room temperature. Phys Rev B, 2003, 67: 060401
Haug T, Perzlmaier K, Back C H. In situ magnetoresistance measurements of ferromagnetic nanocontacts in the Lorentz transmission electron microscope. Phys Rev B, 2009, 79: 024414
Egelhoff W F Jr, Gana L, Ettedguia H, et al. Artifacts that mimic ballistic magnetoresistance. J Magn Magn Mater, 2005, 287: 496–500
Champagne A R, Pasupathy A N, Ralph D C. Mechanically adjustable and electrically gated single-molecule transistors. Nano Lett, 2005, 5: 305–308
Rubio-Bollinger G, Bahn S R, Agraït N, et al. Mechanical properties and formation mechanisms of a wire of single gold atoms. Phys Rev Lett, 2001, 87: 026101
Scheer E, Agraït N, Cuevas J C, et al. The signature of chemical valence in the electrical conduction through a single-atom contact. Nature, 1998, 394: 154–157
Cheng H, Yang W, Liu H, et al. Magnetoresistance of the thin film ferromagnetic nanoconstriction. Chin Sci Bull, 2012, 57: 445–449
Agraït N, Yeyati A L, van Ruitenbeek J M. Quantum properties of atomic-sized conductors. Phys Rep, 2003, 377: 81–279
Reed M A, Zhou C, Muller C J, et al. Conductance of a molecular junction. Science, 1997, 278: 252–254
Sokolov A, Zhang C J, Tsymbal E Y, et al. Quantized magnetoresistance in atomic-size contacts. Nat Nanotech, 2007, 2: 171–175
Steven D L, Shirley R, Daniel T S. Characterization of NixFe1−x (0.10 < x < 0.95) electrodeposition from a family of sulfamate-chloride electrolytes. J Electrochem Soc, 1999, 4: 1431–1435
Shu C, Li C Z, He H X, et al. Fractional conductance quantization in metallic nanoconstrictions under electrochemical potential control. Phys Rev Lett, 2000, 84: 5196–5199
Garcia N, Munoz M, Qian G G, et al. Ballistic magnetoresistance in a magnetic nanometer sized contact: An effective gate for spintronics. Appl Phys Lett, 2001, 79: 4550–4552
Li C Z, He H X, Tao N J. Quantized tunneling current in the metallic nanogaps formed by electrodeposition and etching. Appl Phys Lett, 2000, 77: 3995–3997
Snow E S, Campbell P M. AFM fabrication of sub-10-nanometer metal-oxide devices with in situ control of electrical properties. Science, 1995, 270: 1639–1641
Author information
Authors and Affiliations
Corresponding author
Additional information
This article is published with open access at Springerlink.com
Rights and permissions
This article is published under an open access license. Please check the 'Copyright Information' section either on this page or in the PDF for details of this license and what re-use is permitted. If your intended use exceeds what is permitted by the license or if you are unable to locate the licence and re-use information, please contact the Rights and Permissions team.
About this article
Cite this article
Cheng, H., Yang, W., Liu, H. et al. Magnetoresistance of the ferromagnetic nanocontacts fabricated by electrodeposition. Chin. Sci. Bull. 58, 598–602 (2013). https://doi.org/10.1007/s11434-012-5393-7
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11434-012-5393-7